SI4447ADY Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

New Product
Si4447ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
10
0.16
T_J = 150 °C
1
0.12
I_D = 5 A
0.1
0.08
T_J = 25 °C
0.01
0.04
T_J = 125 °C
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
I_D = 250 μA
0.4
I_D = 1 mA
0.2
0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
10 ^{Limited by R}DS(on)^*
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10