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| SI4447ADY Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET | |||
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New Product
P-Channel 40 V (D-S) MOSFET
Si4447ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 40
RDS(on) (ï)
0.045 at VGS = - 10 V
0.062 at VGS = - 4.5 V
ID (A)d
- 7.2
- 6.1
Qg (Typ.)
11.8 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠100 % UIS Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S
⢠Load Switches, Adaptor Switch
- Notebook PCs
G
Top View
Ordering Information: Si4447ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 40
V
VGS
± 20
TC = 25 °C
- 7.2
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
- 5.7
- 5.5a, b
- 4.4a, b
A
- 20
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 3.5
- 2.1a, b
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
- 10
5
mJ
TC = 25 °C
4.2
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
2.7
2.5a, b
W
1.6a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on TC = 25 °C.
t ï£ï 10 s
Steady State
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
Symbol
RthJA
RthJF
Typical
40
24
Maximum
50
30
Unit
°C/W
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