SI4447ADY Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
5
V_GS = 10 V thru 5 V
24
4
V_GS = 4 V
18
3
Si4447ADY
Vishay Siliconix
12
6
0
0.0
0.10
V_GS = 3 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
T_C = 25 °C
1
T_C = 125 °C
0
T_C = - 55 °C
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1600
0.08
0.06
0.04
V_GS = 4.5 V
V_GS = 10 V
0.02
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 5 A
8
V_DS = 20 V
6
V_DS = 10 V
V_DS = 30 V
4
2
1280
C_iss
960
640
C_oss
320
C_rss
0
0.0
2.4
4.8
7.2
9.6
12.0
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 5 A
1.5
V_GS = 10 V
V_GS = 4.5 V
1.2
0.9
0
0.0
5.1
10.2
15.3
20.4
25.5
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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