SI4429EDY Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4429EDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.080
T_J = 150_C
T_J = 25_C
10
0.064
0.048
0.032
I_D = 13.0 A
0.016
1
0
0.6
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
I_D = 250 mA
0.2
0.000
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
50
40
30
0.0
29
–0.2
10
–0.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
10^–2
10^–1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
www.vishay.com
4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 68_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 70709
S-04712—Rev. A, 24-Sep-01