SI4429EDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si4429EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
V_GS = 10 thru 3 V
40
40
Transfer Characteristics
30
2V
20
10
0
0
0.05
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
0.03
0.02
0.01
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 10 V
0.00
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
5
V_DS = 15 V
4
I_D = 13.0 A
30
20
T_C = 125_C
10
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS – Gate-to-Source Voltage (V)
9000
Capacitance
7500
C_iss
6000
4500
3000
1500
C_oss
0 ^Crss
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 13.0 A
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
60
Q_g – Total Gate Charge (nC)
Document Number: 70709
S-04712—Rev. A, 24-Sep-01
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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