SI4429EDY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4429EDY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = –24 V, V_GS = 0 V
V_DS = –24 V, V_GS = 0 V, T_J = 55_C
V_DS v –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –13.0 A
V_GS = –4.5 V, I_D = –12.0 A
V_GS = –2.5 V, I_D = –9.0 A
V_DS = –15 V, I_D = –13.0 A
I_S = –2.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –15 V, V_GS = –4.5 V, I_D = –13.0 A
V_DD = –15 V, R_L = 15 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
Min
Typ
Max Unit
–0.60
V
"20
–1
mA
–5
–30
A
0.0086 0.0105
0.0105 0.0125
W
0.0160 0.0195
40
S
–0.8
–1.2
V
51
75
9
nC
12.0
14
21
19
29
ms
54
80
41
62
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
20
16
12
8
4
0
0
6
12
18
24
30
V_GS – Gate-to-Source Voltage (V)
10,000
1,000
100
Gate Current vs. Gate-Source Voltage
10
T_J = 150_C
1
0.1
T_J = 25_C
0.01
0
5
10
15
20
V_GS – Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 70709
S-04712—Rev. A, 24-Sep-01