SI4421DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si4421DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
0.3
40
I_D = 850 mA
0.2
30
0.1
20
0.0
10
- 0.1
Single Pulse Power
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.01
0.1
Safe Operating Area, Junction-to-Case
100
1
10
Time (sec)
100 600
Limited by r_DS(on)
10
1
0.1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
2
1
Duty Cycle = 0.5
0.1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72114
S-03158—Rev. A, 17-Feb-03