SI4421DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si4421DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
On-Resistance vs. Drain Current
10000
Capacitance
0.020
0.015
0.010
0.005
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
8
16
24
32
40
I_D - Drain Current (A)
Gate Charge
6
V_DS = 10 V
5
I_D = 14 A
4
3
2
1
0
0
21
42
63
84
105
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
10
T_J = 150_C
8000
C_iss
6000
4000
2000
C_oss
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 4.5 V
1.3
I_D = 14 A
1.2
1.1
1.0
0.9
0.8
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
0.018
I_D = 14 A
0.012
1
T_J = 25_C
0.006
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72114
S-03158—Rev. A, 17-Feb-03
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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