SI4421DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si4421DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 850 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 16 V, V_GS = 0 V
V_DS = - 16 V, V_GS = 0 V, T_J = 70_C
V_DS = - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 14 A
V_GS = - 2.5 V, I_D = - 12 A
V_GS = - 1.8 V, I_D = - 11 A
V_DS = - 10 V, I_D = - 14 A
I_S = - 2.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 10 V, V_GS = - 4.5 V, I_D = - 14 A
V_DD = - 10 V, R_L = 10 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 2.1 A, di/dt = 100 A/ms
Min
Typ
Max Unit
- 0.4
- 0.8
V
"100
nA
-1
mA
- 10
- 30
A
0.007 0.00875
0.0085 0.01075
W
0.011
0.0135
55
S
- 0.6
- 1.1
V
82
125
10
nC
27
3
W
45
70
90
140
350
550
ns
170
260
135
210
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V_GS = 5 thru 2 V
32
1.5 V
24
16
8
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
40
32
24
16
T_C = 125_C
8
25_C
- 55_C
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
V_GS - Gate-to-Source Voltage (V)
Document Number: 72114
S-03158—Rev. A, 17-Feb-03