SI4416DY Datasheet, PDF (4/4 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Si4416DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
0.2
40
I_D = 250 mA
- 0.0
30
- 0.2
20
- 0.4
10
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10 ^{- 2}
Single Pulse Power
10 ^{- 1}
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
2
1
Duty Cycle = 0.5
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 72_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 72266
S-31062—Rev. E, 26-May-03