SI4416DY Datasheet, PDF (3/4 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Si4416DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
1800
Capacitance
0.08
0.06
0.04
0.02
V_GS = 4.5 V
V_GS = 10 V
0.00
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 9 A
1500
C_iss
1200
900
600
300
0
0
C_rss
5
C_oss
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 9 A
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
T_J = 150_C
10
T_J = 25_C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 9 A
0.04
0.02
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72266
S-31062—Rev. E, 26-May-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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