SI4416DY Datasheet, PDF (2/4 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Si4416DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 mA
1
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = "20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 55_C
On-State Drain Current^b
I_D(on)
V_{DS w} 5 V, V_GS = 10 V
20
Drain-Source On-State Resistance^b
r_DS(on)
V_GS = 10 V, I_D = 9.0 A
V_GS = 4.5 V, I_D = 7.3 A
Forward Transconductance^b
g_fs
V_DS = 15 V, I_D = 9.0 A
Diode Forward Voltage^b
V_SD
I_S = 2.1 A, V_GS = 0 V
Dynamic^a
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gt
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 5 V, I_D = 9.0 A
V_DS = 15 V, V_GS = 10 V, I_D = 9.0 A
0.2
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.1 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Typ^a Max Unit
V
"100
nA
1
mA
25
A
0.012
0.018
W
0.019
0.028
23
S
1.2
V
14
20
24
35
nC
4.5
5.9
1.0
2.4
W
16
20
10
20
34
50
ns
13
20
50
90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 10 thru 5 V
40
4V
30
20
10
3V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
50
40
30
20
10
0
0
T_C = 125_C
25_C
- 55_C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72266
S-31062—Rev. E, 26-May-03