SI4413DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4413DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
Single Pulse Power, Junction-to-Ambient
100
0.8
80
0.6
I_D = 250 mA
60
0.4
40
0.2
20
0.0
-0.2
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
Limited by r_DS(on)
10
1 ms
1
0.1
0.1
0.1
T_C = 25_C
Single Pulse
10 ms
100 ms
1s
10 s
dc
1
10
100
V_DS - Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72054
S-21977—Rev. A, 04-Nov-02