SI4413DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si4413DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
7000
0.016
0.012
V_GS = 4.5 V
5600
4200
Capacitance
C_iss
0.008
V_GS = 10 V
2800
0.004
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 13 A
8
1400
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 13 A
1.4
6
1.2
4
1.0
2
0.8
0
0
22
44
66
88
110
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
10
T_J = 150_C
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
0.018
I_D = 13 A
0.012
1
T_J = 25_C
0.006
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72054
S-21977—Rev. A, 04-Nov-02
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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