SI4413DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
P-Channel 30-V (D-S) MOSFET
Si4413DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0095 @ V_GS = -10 V
-30
0.0145 @ V_GS = -4.5 V
I_D (A)
-13
- 10
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Notebook
- Load switch
- Battery switch
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
-30
"20
-13
-9
- 10.5
-7.5
-50
-2.7
-1.36
3.0
1.5
1.9
0.95
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72054
S-21977—Rev. A, 04-Nov-02
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
70
16
Maximum
42
84
21
Unit
_C/W
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