SI4413ADY-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4413ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
100
0.6
0.4
I_D = 250 µA
0.2
0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1
0.1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
2
1
Duty Cycle = 0.5
0.1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
0.01
10 ^-4
Notes:
P _DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 70 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^-3
10 ^-2
10 ^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 73792
S-83096-Rev. C, 29-Dec-08