SI4413ADY-T1-E3 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.014
7000
Si4413ADY
Vishay Siliconix
0.012
0.010
V_GS = 4.5 V
5600
C_iss
4200
0.008
0.006
V_GS = 10 V
0.004
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 13 A
8
2800
1400
0
0
C_oss
C_rss
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Gate Charge
1.6
V_GS = 10 V
I_D = 13 A
1.4
6
1.2
4
1.0
2
0.8
0
0
22
44
66
88
110
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
10
T_J = 150 °C
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Capacitance
0.025
0.020
0.015
0.010
1
T_J = 25 °C
0.005
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Document Number: 73792
S-83096-Rev. C, 29-Dec-08
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
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