SI4413ADY-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si4413ADY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0075 at V_GS = - 10 V
- 30
0.011 at V_GS = - 4.5 V
I_D (A)
- 15
- 12.3
SO-8
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Notebook
- Load Switch
- Battery Switch
S
S1
8D
S2
7D
G
S3
6D
G4
5D
Top View
Ordering Information: Si4413ADY-T1-E3 (Lead (Pb)-free)
Si4413ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
I_DM
- 15
- 10.5
- 11.8
- 8.3
- 50
A
Continuous Source Current (Diode Conduction)^a
I_S
- 2.7
- 1.36
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.0
1.5
1.9
0.95
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
70
16
Maximum
42
84
21
Unit
°C/W
Document Number: 73792
S-83096-Rev. C, 29-Dec-08
www.vishay.com
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