SI1499DH_08 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 1.2-V (G-S) MOSFET

Si1499DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.5
0.4
I_D = 2 A
T_J = 150 °C
1
T_J = 25 °C
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.3
I_D = 250 µA
0.2
0.1
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0.3
0.2
T_J = 125 °C
0.1
T_J = 25 °C
0.0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
12
10
8
6
T_A = 25 °C
4
2
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
Limited by R_DS(on)*
10
1
0.1
T_A = 25 °C
Single Pulse
10 µs, 100 µs
1 ms
10 ms
100 ms
1s
10 s
DC, 100 s
0.01
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73338
S-80579-Rev. E, 17-Mar-08