SI1499DH_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 1.2-V (G-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
8
V_GS = 5 thru 2 V
8
6
6
1.5 V
4
4
Si1499DH
Vishay Siliconix
T_C = - 55 °C
25 °C
125 °C
2
0
0.0
0.25
1V
0.5
1.0
1.5
2.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
0.20
0.15
0.10
V_GS = 1.5 V
V_GS = 1.8 V
V_GS = 2.5 V
0.05
V_GS = 4.5 V
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 2 A
4
3
V_DS = 4 V
2
V_DS = 5.6 V
800
C_iss
600
400
200
C_rss
C_oss
0
012345678
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 2 A
1.4
1.2
1.0
V_GS = 4.5 V
V_GS = 2.5 V
1
0.8
0
0
2
4
6
8
10
12
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73338
S-80579-Rev. E, 17-Mar-08
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3