SI1499DH_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 1.2-V (G-S) MOSFET

New Product
P-Channel 1.2-V (G-S) MOSFET
Si1499DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.078 at V_GS = - 4.5 V
0.095 at V_GS = - 2.5 V
-8
0.115 at V_GS = - 1.8 V
0.153 at V_GS = - 1.5 V
0.424 at V_GS = - 1.2 V
I_D (A)^c
- 1.6
- 1.6
- 1.6
- 1.6
- 1.6^b
Q_g (Typ)
10.5 nC
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
BI XX
Lot Traceability
and Date Code
Part #
Code
Top View
Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFET
• Ultra-Low On-Resistance
APPLICATIONS
• Load Switch for Portable Devices
- Guaranteed Operation at V_GS = 1.2 V
Critical for Optimized Design and Longer
Battery Life
RoHS
COMPLIANT
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
-8
V
V_GS
±5
T_C = 25 °C
-1.6^c
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_C = 70 °C
T_A = 25 °C
I_D
- 1.6^c
- 1.6^{a, b, c}
T_A = 70 °C
- 1.6^{a, b, c}
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
- 6.5^c
Continuous Source-Drain Diode Current^{a, b}
T_C = 25 °C
T_A = 25 °C
I_S
- 1.6^c
- 1.3^{a, b}
T_C = 25 °C
2.78
Maximum Power Dissipation^{a, b}
T_C = 70 °C
T_A = 25 °C
P_D
1.78
2.5^{a, b}
W
T_A = 70 °C
1^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 73338
S-80579-Rev. E, 17-Mar-08
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
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