IRF840AS Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100
10
T_J = 150 ^°C
1
T_J = 25 ^°C
0.1
0.2
V_GS = 0 V
0.5
0.8
1.1
1.4
V_SD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = 78.04 A
16
V_DS = 400V
V_DS = 250V
V_DS = 100V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10000
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4
Document Number: 91066
S-81412-Rev. A, 07-Jul-08