IRF840AS Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
500
V_GS = 10 V
38
9.0
18
Single
0.85
D
I²PAK
(TO-262)
D²PAK
(TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective C_oss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge
• Full Bridge
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRF840ASPbF
SiHF840AS-E3
SnPb
IRF840AS
SiHF840AS
Note
a. See device orientation.
D²PAK (TO-263)
IRF840ASTRLPbF^a
SiHF840ASTL-E3^a
IRF840ASTRL^a
SiHF840ASTL^a
D²PAK (TO-263)
IRF840ASTRRPbF^a
SiHF840ASTR-E3^a
IRF840ASTRR^a
SiHF840ASTR^a
I²PAK (TO-262)
IRF840ALPbF
SiHF840AL-E3
IRF840AL
SiHF840AL
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^{c, e}
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Temperature
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 16 mH, R_G = 25 Ω, I_AS = 8.0 A (see fig. 12).
c. I_SD ≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRF840A/SiH840A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
500
± 30
8.0
5.1
32
1.0
510
8.0
13
125
3.1
5.0
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91066
S-81412-Rev. A, 07-Jul-08
www.vishay.com
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