IRF840AS Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)^a
R_thJA
Maximum Junction-to-Case (Drain)
R_thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
Reference to 25 °C, I_D = 1 mA^d
V_DS = V_GS, I_D = 250 µA
V_GS = ± 30 V
V_DS = 500 V, V_GS = 0 V
V_DS = 400 V, V_GS = 0 V, T_J = 125 °C
V_GS = 10 V
I_D = 4.8 A^b
V_DS = 50 V, I_D = 4.8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V,
V_DS = 25 V,
f = 1.0 MHz, see fig. 5
V_GS = 0 V
V_DS = 1.0 V, f = 1.0 MHz
V_DS = 400 V, f = 1.0 MHz
V_DS = 0 V to 480 V^{c, d}
V_GS = 10 V
I_D = 8.0 A, V_DS = 400 V,
see fig. 6 and 13^{b, d}
V_DD = 250 V, I_D = 8.0 A,
R_G = 9.1 Ω, R_D = 31 Ω, see fig. 10^{b, d}
MIN.
500
-
2.0
-
-
-
-
3.7
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.58
-
V/°C
-
4.0
V
-
± 100 nA
-
25
µA
-
250
-
0.85
Ω
-
-
S
1018
-
155
-
8.0
-
pF
1490
42
56
-
38
-
9.0
nC
-
18
11
-
23
-
ns
26
-
19
-
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
Pulsed Diode Forward Current^a
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
8.0
A
-
-
32
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = 8.0 A, V_GS = 0 V^b
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_rr
-
422
633
ns
T_J = 25 °C, I_F = 8.0 A, dI/dt = 100 A/µs^b
Q_rr
-
2.0
3.0
µC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C_oss eff. is a fixed capacitance that gives the same charging time as C_oss while V_DS is rising from 0 to 80 % V_DS.
d. Uses IRF840A/SiHF840A data and test conditions
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Document Number: 91066
S-81412-Rev. A, 07-Jul-08