DG538A Datasheet, PDF (4/16 Pages) Vishay Siliconix – 4-/8-Channel Wideband Video Multiplexers

DG534A/538A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +21 V
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +21 V
V– to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 V to +0.3 V
V_L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to (V+) + 0.3 V
Digital Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V_L) + 0.3 V
or 20 mA, whichever occurs first
V_S, V_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –0.3 V to (V–) + 14 V
or 20 mA, whichever occurs first
Current (any terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Current(S or D) Pulsed l ms 10% Duty . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA
Storage Temperature
(A Suffix) . . . . . . . . . . . . . . . . . . . –65 to 150_C
(D Suffix) . . . . . . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)^a
Plastic DIP^b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625 mW
PLCC^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
Sidebraze^d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200 mW
Notes:
a. All leads soldered or welded to PC board.
b. Derate 8.3 mW/_C above 75_C.
c. Derate 6 mW/_C above 75_C.
d. Derate 16 mW/_C above 75_C.
SPECIFICATIONS^a
Parameter
Analog Switch
Analog Signal Range^g
Drain-Source
On-Resistance
Resistance Match
Between Channels
Source Off
Leakage Current
Drain Off
Leakage Current
Drain On
Leakage Current
Digital Control
Input Voltage High
Input Voltage Low
Address Input Current
Symbol
V_ANALOG
r_DS(on)
Dr_DS(on)
I_S(off)
I_D(off)
I_D(on)
V_AIH
V_AIL
I_AI
Address Output Current
I_AO
Dynamic Characteristics
On State Input
Capacitance^g
C_S(on)
Off State Input
Capacitance^g
C_S(off)
Off State Output
Capacitance^g
C_D(off)
Transition Time
Break-Before-Make
Interval
EN, WR Turn On Time
t_TRANS
t_OPEN
t_ON
EN, Turn Off Time
t_OFF
Charge Injection
Qi
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –3 V, V_L = 5 V
WR = 0.8 V, RS, EN= 2 V
Temp^b
Typ^c
V– = –5 V
I_S = –10 mA, V_S = 0 V
V_AIL = 0.8 V, V_AIH = 2 V
Sequence Each Switch On
V_S = 8 V, V_D = 0 V, EN = 0.8 V
V_S = 0 V, V_D = 8 V, EN = 0.8 V
V_S = V_D = 8 V
Full
Room
45
Full
Room
Room
0.05
Full
Room
0.1
Full
Room
0.1
Full
V_AI = 0 V, or 2 V or 5 V
V_AO = 2.7 V
V_AO = 0.4 V
Full
Full
Room
–0.1
Full
Room
–21
Room
3.5
See Figure 11
PLCC Room
28
DIP
Room
31
PLCC Room
3
See Figure 12
DIP
Room
4
PLCC Room
6
DIP
Room
8
See Figure 4
Room
160
Full
Room
80
Full
See Figure 2 and 3
Room
150
Full
See Figure 2
Room
105
Full
See Figure 5
Room
–70
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Min^d Max^d Min^d Max^d
Unit
–5
8
–5
8
V
90
90
120
120
W
9
9
–5
5
–5
5
–50
50
–50
50
–20
20
–20
20
–500 500 –100 100
nA
–20
20
–20
20
–1000 1000 –200 200
2
2
V
0.8
0.8
–1
1
–1
1
–10
10
–10
10
mA
–2.5
–2.5
mA
2.5
2.5
40
40
45
45
5
4
pF
5
10
8
10
300
300
500
500
50
50
25
25
ns
300
300
500
500
175
175
300
300
pC
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Document Number: 70069
S-05734—Rev. G, 29-Jan-02