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DG485 Datasheet, PDF (4/11 Pages) Vishay Siliconix – Octal Analog Switch Array
DG485
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Parameter
Symbol
Dynamic Characteristics (Cont’d)
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb Typc Mind Maxd Mind Maxd Unit
Source Off
Capacitancee
CS(off)
Vgen = 0 V, Rgen = 0 W, f = 1 MHz
Room
7
Drain Off Capacitancee
CD(off)
Room
43
Vgen = 0 V, Rgen = 0 W, f = 1 MHz One
Channel On
Room
53
pF
On-State Capacitancee
CD(on)
Vgen = 0 V, Rgen = 0 W, f = 1 MHz All Chan-
nels On
Room
122
Power Supplies
Positive Supply
Current
Negative Supply
Current
Logic Supply Current
Ground Current
I+
I–
IL
IGND
V+ = 16.5 V, V– = –16.5 V
VIN = 0 or 5 V, VL = 5.25 V
DOUT Open
Room
0.001
3
3
Full
10
10
Room –0.001
–3
–3
Full
–10
–10
mA
Room
0.001
3
3
Full
10
10
Room –0.001
–3
–3
Full
–10
–10
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
g.
ǒ Ǔ VIN = input voltage to perform proper function.
rDS(on) MAX – rDS(on) MIN
For each VD : DrDS(on) +
rDS(on) AVE
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1 mA
100 nA
10 nA
1 nA
100 pA
10 pA
Supply Currents vs. Temperature
V+ = 15 V
V– = –15 V
VL = 5 V
IPOS
IL
INEG
IGND
1 pA
0.1 pA
–50 –30 –10 10 30 50 70
Temperature (_C)
90 110 130
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5-4
rDS(on) vs. VD and Power Supply Voltage
160
140
VL = 5 V
IS = –5 mA
120
100
"5 V
80
"8 V
60
"10 V
40
"12 V
20
"15 V
"20 V
0
–20
–15 –10 –5 0
5 10
VD – Drain Voltage (V)
15 20
Document Number: 70065
S-52433—Rev. E, 06-Sep-99