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| DG200B Datasheet, PDF (4/6 Pages) Vishay Siliconix – Monolithic Dual SPST CMOS Analog Switch | |||
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DG200B
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
110
100
90
±5V
80
70
60
± 10 V
50
± 15 V
40
± 20 V
30
20
10
- 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20
VD - Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltages
1 nA
V+ = 15 V
V- = - 15 V
VS, VD = ± 14 V
100 pA
IS(off), ID(off)
10 pA
1 pA
- 55 - 35 - 15 5 25 45 65 85 105 125
Temperature (°C)
Leakage Current vs. Temperature
100
V+ = 15 V
90
V- = - 15 V
80
70
60
125 °C
50
85 °C
40
25 °C
30
- 55 °C
20
10
0
- 15 - 10
-5
0
5
10
15
VD - Drain Voltage (V)
rDS(on) vs. VD and Temperature
40
V+ = 22 V
30
V- = - 22 V
TA = 25 °C
20
10
ID(on)
0
IS(off), ID(off)
- 10
- 20
- 30
- 40
- 20 - 15 - 10 - 5
0
5 10 15 20
Leakage Currents vs. Analog Voltage
TEST CIRCUITS
VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge
of output waveform.
+ 15 V
3V
Logic
Input
0V
Switch
Input VS
Switch
Output
VO
www.vishay.com
4
50 %
tr < 20 ns
tf < 20 ns
tOFF
90 %
VS = + 5 V
3V
V+
S
D
IN
GND
V-
RL
1 kΩ
VO
CL
35 pF
tON
- 15 V
RL
VO = VS
RL + rDS(on)
Figure 2. Switching Time
Document Number: 71357
S-71155âRev. C, 11-Jun-07
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