71875 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7880DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
0.2
160
I_D = 250 mA
–0.0
120
–0.2
Single Pulse Power
–0.4
80
–0.6
40
–0.8
–1.0
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
100
Limited by
r_DS(on)
10
Safe Operating Area
1
0.1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
2
1
Duty Cycle = 0.5
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 50_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71875
S-20919—Rev. A, 01-Jul-02