71875 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7880DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 29 A
V_GS = 4.5 V, I_D = 25 A
V_DS = 6 V, I_D = 29 A
I_S = 4.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 4.5 V, I_D = 29 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
3.0
V
"100
nA
1
mA
5
30
A
0.0025 0.0030
W
0.0035 0.00425
90
S
0.68
1.1
V
40.5
60
18
nC
10.5
1.2
W
30
50
15
25
110
200
ns
35
60
55
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V_GS = 10 thru 4 V
50
40
30
3V
20
10
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
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2
Transfer Characteristics
60
50
40
30
20
10
0
0.0
T_C = 125_C
25_C
–55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS – Gate-to-Source Voltage (V)
Document Number: 71875
S-20919—Rev. A, 01-Jul-02