71875 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si7880DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.005
On-Resistance vs. Drain Current
8000
0.004
V_GS = 4.5 V
6400
Capacitance
C_iss
0.003
0.002
V_GS = 10 V
0.001
0.000
0
10
20
30
40
50
60
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 29 A
6
4
2
0
0
18
36
54
72
90
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
T_J = 150_C
10
T_J = 25_C
4800
3200
1600
C_rss
C_oss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 29 A
1.4
1.2
1.0
0.8
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.010
0.008
0.006
0.004
I_D = 29 A
0.002
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71875
S-20919—Rev. A, 01-Jul-02
0.000
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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