2N3819 Datasheet, PDF (4/5 Pages) NXP Semiconductors – N-channel J-FET

2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Gate-Source Voltage
10
V_GS(off) = –2 V
V_DS = 10 V
f = 1 kHz
8
Transconductance vs. Gate-Source Voltgage
10
V_GS(off) = –3 V
V_DS = 10 V
f = 1 kHz
8
T_A = –55_C
6
25_C
T_A = –55_C
6
25_C
4
125_C
2
4
125_C
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
V_GS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
300
T_A = –55_C
240
V_GS(off) = –2 V
180
–3 V
120
0
0
–0.6
–1.2
–1.8
–2.4
–3
V_GS – Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
g_fs R_L
80
A_V + _{1 ) RLgos}
Assume V_DD = 15 V, V_DS = 5 V
10 V
60
R_L + _ID
V_GS(off) = –2 V
40
60
0
0.1
1
10
I_D – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz
4
3
V_DS = 0 V
2
1
V_DS = 10 V
20
–3 V
0
0.1
1
10
I_D – Drain Current (mA)
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
3.0
f = 1 MHz
2.4
1.8
1.2
V_DS = 0 V
0.6
V_DS = 10 V
0
0
–4
–8
–12
–16
–20
V_GS – Gate-Source Voltage (V)
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7-4
0
0
–4
–8
–12
–16
–20
V_GS – Gate-Source Voltage (V)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01