2N3819 Datasheet, PDF (2/5 Pages) NXP Semiconductors – N-channel J-FET

2N3819
Vishay Siliconix
SPECIFICATIONS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current^b
Gate Reverse Current
Gate Operating Current^c
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Voltage
Gate-Source Forward Voltage
Dynamic
Common-Source Forward Transconductance^c
Common-Source Output Conductance^c
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage^c
Symbol
V_(BR)GSS
V_GS(off)
I_DSS
I_GSS
I_G
I_D(off)
r_DS(on)
V_GS
V_GS(F)
g_fs
g_os
C_iss
C_rss
e_n
Test Conditions
I_G = –1 mA , V_DS = 0 V
V_DS = 15 V, I_D = 2 nA
V_DS = 15 V, V_GS = 0 V
V_GS = –15 V, V_DS = 0 V
T_A = 100_C
V_DG = 10 V, I_D = 1 mA
V_DS = 10 V, V_GS = –8 V
V_GS = 0 V, I_D = 1 mA
V_DS = 15 V, I_D = 200 mA
I_G = 1 mA , V_DS = 0 V
V_DS = 15 V
V_GS = 0 V
f = 1 kHz
f = 100 MHz
f = 1 kHz
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 10 V, V_GS = 0 V, f = 100 Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v2%.
c. This parameter not registered with JEDEC.
Limits
Min Typ^a Max Unit
–25
–35
V
–3
–8
2
10
20
mA
–0.002
–2
nA
–0.002
–2
mA
–20
pA
2
150
W
–0.5
–2.5
–7.5
V
0.7
2
5.5
6.5
mS
1.6
5.5
25
50
mS
2.2
8
pF
0.7
4
6
nV⁄
√Hz
NH
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
10
I_DSS
16
8
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
100
r_DS @ I_{D =} 1 mA, V_GS = 0 V
g_os @ V_DS = 10 V, V_GS = 0 V
f = 1 kHz
400
80
12
g_fs
8
6
300
r_DS
60
g_os
4
200
40
4
0
0
I_DSS @ V_DS = 15 V, V_GS = 0 V
g_fs @ V_DS = 15 V, V_GS = 0 V
f = 1 kHz
–2
–4
–6
–8
V_GS(off) – Gate-Source Cutoff Voltage (V)
2
0
–10
100
20
0
0
0
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
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Document Number: 70238
S–04028—Rev. D ,04-Jun-01