2N3819 Datasheet, PDF (3/5 Pages) NXP Semiconductors – N-channel J-FET

2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
Gate Leakage Current
5 mA
1 mA
T_A = 125_C
0.1 mA
5 mA
T_A = 25_C
I_GSS @
125_C
1 mA
0.1 mA
I_GSS @ 25_C
Common-Source Forward Transconductance
vs. Drain Current
10
V_GS(off) = –3 V
8
V_DS = 10 V
f = 1 kHz
T_A = –55_C
6
25_C
4
125_C
2
0.1 pA
0
10
8
6
4
2
10
20
V_DG – Drain-Gate Voltage (V)
Output Characteristics
V_GS(off) = –2 V
V_GS = 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
0
–1.4 V
0
2
4
6
8
10
V_DS – Drain-Source Voltage (V)
Transfer Characteristics
10
V_GS(off) = –2 V
V_DS = 10 V
8
T_A = –55_C
6
25_C
0
0.1
1
10
I_D – Drain Current (mA)
Output Characteristics
15
V_GS(off) = –3 V
12
V_GS = 0 V
9
–0.3 V
–0.6 V
6
–0.9 V
–1.2 V
–1.5 V
3
0
0
–1.8 V
2
4
6
8
10
V_DS – Drain-Source Voltage (V)
Transfer Characteristics
10
V_GS(off) = –3 V
V_DS = 10 V
8
T_A = –55_C
6
125_C
25_C
4 ^125_C
4
2
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
V_GS – Gate-Source Voltage (V)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
0
0
–0.6
–1.2
–1.8
–2.4
–3
V_GS – Gate-Source Voltage (V)
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