VS-UFB80FA60 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Fully insulated package

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1
VS-UFB80FA60
Vishay Semiconductors
0.1
0.01
0.0001
DC
Single pulse
(thermal resistance)
0.001
0.01
0.1
t₁ - Rectangular Pulse Duration (s)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t₂
2. Peak T_J = P_DM x Z_thJC + T_C
1
10
Fig. 4 - Maximum Thermal Impedance Z_thJC Characteristics (Per Diode)
175
150
125
DC
100
75
50
Square wave (D = 0.50)
25 _{80 % Rated VR applied}
0
0 10 20 30 40 50 60 70 80 90 100
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
200
V_R = 200 V
175
150
I_F = 30 A, 125 °C
125
100
I_F = 30 A, 25 °C
75
50
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
200
180
160
140
RMS Limit
120
100
80
D = 0.05
60
D = 0.10
D = 0.20
40
D = 0.33
20
DC
D = 0.50
0
0 10 20 30 40 50 60 70 80 90 100 110
Average Forward Current - I_F(AV) (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
1750
1500
1250
I_F = 30 A, T_J = 125 °C
1000
750
500
I_F = 30 A, T_J = 25 °C
250
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Revision: 31-May-16
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Document Number: 93642
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