VS-UFB80FA60 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Fully insulated package

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VS-UFB80FA60
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 80 A
SOT-227
PRODUCT SUMMARY
V_R
I_F(AV) per module at T_C = 104 °C
t_rr
Type
Package
600 V
80 A
34 ns
Modules - Diode FRED Pt^®
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V_R
I_F
I_FSM
P_D
V_ISOL
T_J, T_Stg
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T_J max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-UFB80FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery current
shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
TEST CONDITIONS
T_C = 85 °C
T_C = 25 °C
T_C = 85 °C
Any terminal to case, t = 1 minute
MAX.
600
57
280
174
2500
-55 to +175
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 μA
600
-
I_F = 30 A
-
1.32
I_F = 60 A
-
1.52
I_F = 30 A
I_F = 60 A
-
1.14
T_J = 125 °C
-
1.38
V_R = V_R rated
-
0.1
T_J = 175 °C, V_R = V_R rated
-
0.2
V_R = 600 V
-
30
MAX.
-
1.69
1.9
1.39
1.66
50
1.0
-
UNITS
V
μA
mA
pF
Revision: 31-May-16
1
Document Number: 93642
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000