VS-UFB80FA60 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Fully insulated package

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VS-UFB80FA60
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
T_J = 25 °C I_F = 1 A, dI_F/dt = 200 A/μs, V_R = 30 V -
T_J = 25 °C
-
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
I_F = 30 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
-
-
-
T_J = 125 °C
-
34
79
155
6
14
234
1085
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-
-
-
-
-
-
TYP.
MAX.
-
1.02
-
0.51
0.10
-
30
-
-
1.1 (9.7)
-
1.3 (11.5)
SOT-227
UNITS
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
1000
T_J = 175 °C
100
T_J = 125 °C
10
T_J = 25 °C
1
0 0.5 1 1.5 2 2.5 3 3.5
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode)
10 000
1000
100
10
T_J = 175 °C
T_J = 125 °C
1
0.1
0.01
T_J = 25 °C
0.001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
100
10
10
100
1000
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 31-May-16
2
Document Number: 93642
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