VS-UFB210FA40P Datasheet, PDF (3/7 Pages) Vishay Siliconix – Fully insulated package

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1
VS-UFB210FA40P
Vishay Semiconductors
0.1
0.01
0.0001
P
DM
DC
Single pulse
(thermal resistance)
t
1
t
2
Notes:
1.
2.
Duty
Peak
factor D = t₁/t₂
T_J = P_DM x Z_thJC
+^.
T_C
.
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z_thJC Characteristics (Per Leg)
175
150
125
100
DC
75 ^{Square wave (D = 0.5)}
80 % rated V_R applied
50
25
See note ⁽¹⁾
0
0 50 100 150 200 250 300 350
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
500
400
300
RMS limit
D = 0.20
200
D = 0.25
D = 0.33
100
D = 0.50
DC
D = 0.75
0
0 50 100 150 200 250 300 350
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
250
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
200
150
I_F = 150 A
I_F = 75 A
100
50
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
5000
4500
4000
3500
3000
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
I_F = 150 A
I_F = 75 A
2500
2000
1500
1000
500
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Revision: 22-Jul-13
3
Document Number: 93994
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