VS-UFB210FA40P Datasheet, PDF (1/7 Pages) Vishay Siliconix – Fully insulated package

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VS-UFB210FA40P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 210 A
SOT-227
1
4
2
3
PRODUCT SUMMARY
V_R
I_F(AV) per module at T_C = 133 °C
t_rr
Type
Package
400 V
210 A
40 ns
Modules - Diode FRED Pt^®
SOT-227
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T_J max. = 175 °C)
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-UFB210FA40P insulated modules integrate two
state of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Cathode to anode voltage
V_R
400
V
Continuous forward current per diode
Single pulse forward current per diode
I_F ⁽¹⁾
I_FSM
T_C = 90 °C
T_C = 25 °C
210
A
1300
Maximum power dissipation per module
P_D
T_C = 90 °C
531
W
RMS isolation voltage
V_ISOL
Any terminal to case, t = 1 minute
2500
V
Operating junction and storage temperatures
T_J, T_Stg
-55 to +175
°C
Note
(1) _{Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.}
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 μA
I_F = 100 A
I_F = 100 A, T_J = 175 °C
V_R = V_R rated
T_J = 175 °C, V_R = V_R rated
V_R = 400 V
400
-
-
1.06
-
0.85
-
1.3
-
0.36
-
100
MAX.
-
1.24
0.95
50
4
-
UNITS
V
μA
mA
pF
Revision: 22-Jul-13
1
Document Number: 93994
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000