VS-UFB210FA40P Datasheet, PDF (2/7 Pages) Vishay Siliconix – Fully insulated package

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VS-UFB210FA40P
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
t_rr
T_J = 25 °C
-
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
I_F = 150 A
-
dI_F/dt = 200 A/μs
-
V_R = 200 V
-
-
TYP.
40
93
172
10.5
20.2
490
1740
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Mounting torque
Case style
TEST CONDITIONS
Flat, greased surface
MIN.
-
-
-
-
-
TYP. MAX.
-
0.32
-
0.16
0.1
-
30
-
-
1.3
SOT-227
UNITS
°C/W
g
Nm
1000
100
T_J = 175 °C
T_J = 25 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
10 000
1000
100
T_J = 175 °C
10
1
T_J = 25 °C
0.1
0.01
0.001
0
100
200
300
400
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
T_J = 25 °C
10
10
100
1000
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 22-Jul-13
2
Document Number: 93994
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