VS-ST330CL Datasheet, PDF (3/8 Pages) Vishay Siliconix – Metal case with ceramic insulator

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TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-ST330CL Series
Vishay Semiconductors
SYMBOL
P_GM
P_G(AV)
I_GM
+V_GM
-V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
VALUES
UNITS
Typ. Max.
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
10.0
W
2.0
3.0
A
T_J = T_J maximum, t_p  5 ms
20
V
5.0
T_J = -40 °C
200 -
T_J = 25 °C
T_J = 125 °C
T_J = -40 °C
T_J = 25 °C
100 200 mA
Maximum required gate trigger/
current/voltage are the lowest ^{50 -}
value which will trigger all units _{2.5 -}
12 V anode to cathode applied
1.8 3.0 V
T_J = 125 °C
1.1 -
Maximum gate current/voltage
not to trigger is the maximum
10
mA
T_J = T_J maximum value which will not trigger any
unit with rated V_DRM anode to
cathode applied
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
T_J
Maximum storage temperature range
T_Stg
Maximum thermal resistance, junction to heatsink R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, case to heatsink
R_thC-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to +125
°C
-40 to +150
0.11
0.06
K/W
0.011
0.005
9800
N
(1000)
(kg)
250
g
TO-200AC (B-PUK)
R_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE
DOUBLE SIDE
180°
0.012
0.010
0.008
0.008
120°
0.014
0.015
0.014
0.014
90°
0.018
0.018
0.019
0.019
T_J = T_J maximum K/W
60°
0.026
0.027
0.027
0.028
30°
0.045
0.046
0.046
0.046
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
Revision: 04-Aug-14
3
Document Number: 94408
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