VS-ST330CL Datasheet, PDF (2/8 Pages) Vishay Siliconix – Metal case with ceramic insulator

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VS-ST330CL Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current 
at heatsink temperature
I_T(AV)
Maximum RMS on-state current
I_T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
I_TSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I²ïƒ–t
V_T(TO)1
V_T(TO)2
r_t1
r_t2
V_TM
I_H
I_L
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % V_{RRM ï€} 
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I_T(AV) < I <  x I_T(AV)), T_J = T_J maximum
(I >  x I_T(AV)), T_J = T_J maximum
(16.7 % x  x I_T(AV) < I <  x I_T(AV)), T_J = T_J maximum
(I >  x I_T(AV)), T_J = T_J maximum
I_pk = 1730 A, T_J = T_J maximum, t_p = 10 ms sine pulse
T_J = 25 °C, anode supply 12 V resistive load
VALUES
650 (314)
55 (75)
1230
9000
9420
7570
7920
405
370
287
262
4050
0.91
0.93
0.57
0.57
1.90
600
1000
UNITS
A
°C
A
kA²s
kA²ïƒ–s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise 
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t_d
t_q
TEST CONDITIONS
Gate drive 20 V, 20 , t_r  1 μs
T_J = T_J maximum, anode voltage  80 % V_DRM
Gate current 1 A, dI_g/dt = 1 A/μs
V_d = 0.67 % V_DRM, T_J = 25 °C
I_TM = 550 A, T_J = T_J maximum, dI/dt = 40 A/μs, 
V_R = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t_p = 500 μs
VALUES
1000
1.0
100
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of 
off-state voltage
Maximum peak reverse and 
off-state leakage current
SYMBOL
dV/dt
I_RRM,
I_DRM
TEST CONDITIONS
T_J = T_J maximum linear to 80 % rated V_DRM
T_J = T_J maximum, rated V_DRM/V_RRM applied
VALUES UNITS
500
V/μs
50
mA
Revision: 04-Aug-14
2
Document Number: 94408
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