VS-HFA70EA120 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Fast recovery time characteristic

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1
VS-HFA70EA120
Vishay Semiconductors
0.1
0.01
0.0001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
DC
1. Duty factor D = t₁/t₂
2. Peak T_J = P_DM x Z_thJC + T_C
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z_thJC Characteristics
175
150
125
100
DC
75
50 ^{Square wave (D = 0.50)}
80 % rated V_R applied
25
0
0
20
40
60
80 100 120
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
200
150
RMS limit
100
D = 0.20
D = 0.25
D = 0.33
D = 0.50
50
D = 0.75
DC
0
0
20
40
60
80
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 5); 
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
300
I_F = 50 A
V_R = 200 V
250
T_J = 125 °C
200
150
T_J = 25 °C
100
50
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
3000
2500
I_F = 50 A
V_R = 200 V
2000
1500
T_J = 125 °C
1000
500
T_J = 25 °C
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Revision: 31-May-16
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Document Number: 94747
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