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VS-HFA70EA120 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Fast recovery time characteristic
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VS-HFA70EA120
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 70 A
SOT-227
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VR
VF (typical)
trr (typical)
IF(DC) at TC, per module
Package
1200 V
2.2 V
48 ns
70 A at 121 °C
SOT-227
DESCRIPTION / APPLICATIONS
This SOT-227 modules with HEXFRED® rectifier are in
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built. 
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current, per leg
IF
Single pulse forward current
IFSM
Maximum power dissipation, per leg
PD
RMS isolation voltage
Operating junction and storage 
temperature range
VISOL
TJ, TStg
TEST CONDITIONS
TC = 121 °C
TJ = 25 °C
TC = 25 °C
TC = 100 °C
Any terminal to case, t = 1 minute
MAX.
1200
35
350
357
143
2500
-55 to +150
UNITS
V
A
W
V
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode 
breakdown voltage
VBR
IR = 100 μA
1200
IF = 30 A
-
IF = 60 A
-
Forward voltage, per leg
VFM
IF = 30 A, TJ = 125 °C
IF = 60 A, TJ = 125 °C
-
-
IF = 30 A, TJ = 150 °C
-
IF = 60 A, TJ = 150 °C
-
VR = VR rated
-
Reverse leakage current, per leg
IRM
TJ = 125 °C, VR = VR rated
-
TJ = 150 °C, VR = VR rated
-
TYP.
-
2.2
2.8
2.13
2.70
2.04
2.65
2.0
1.6
5
MAX.
-
3.0
4.0
-
-
-
-
75
5
10
UNITS
V
μA
mA
Revision: 31-May-16
1
Document Number: 94747
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000