VS-HFA70EA120 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Fast recovery time characteristic

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VS-HFA70EA120
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time, per leg
Peak recovery current, per leg
Reverse recovery charge, per leg
Junction capacitance, per leg
I_F = 1 A; dI_F/dt = 200 A/μs; V_R = 30 V
-
t_rr
T_J = 25 °C
-
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 50 A
dI_F/dt = - 200 A/μs
V_R = 200 V
-
-
-
-
-
C_T
V_R = 1200 V
-
48
145
218
13
19
910
1920
27
MAX.
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both legs conducting
R_thJC
Case to heatsink
Weight
R_thCS Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-
-
-
-
-
-
TYP.
MAX.
-
0.35
-
0.175
0.05
-
30
-
-
1.1 (9.7)
-
1.3 (11.5)
SOT-227
UNITS
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
1000
100
10
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
10 000
1000
T_J = 150 °C
100
T_J = 125 °C
10
1
T_J = 25 °C
0.1
0.01
0
200 400 600 800 1000 1200
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
100
10
10
100
1000
10 000
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 31-May-16
2
Document Number: 94747
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