VS-GA200HS60S1PBF Datasheet, PDF (3/7 Pages) Vishay Siliconix – Very low conduction losses

www.vishay.com
VS-GA200HS60S1PbF
Vishay Semiconductors
160
140
120
100
80
60
40
20
0
0
100
200
300
400
500
Maximum DC Collector Current (A)
Fig. 3 - Case Temperature vs. Maximum Collector Current
16
14
12
10
8
Typical value
6
4
2
0
0
300 600 900 1200 1500 1800
Q_G - Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
1.6
400 A
1.4
1.2
200 A
1.0
120 A
0.8
20 40 60 80 100 120 140 160
T_J - Junction Temperature (°C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
50
45
E_off typical
40 _{TJ = 25 °C}
V_CE = 480 V
35 ^VGE ^{= 15 V}
I_C = 200 A
30
E_on typical
25 _Freewheeling
diode 30EPH06
20
0
10
20
30
40
50
R_G - Gate Resistance (Ω)
Fig. 6 - Typical Switching Losses vs. Gate Resistance
80
70
T_J = 125 °C
V_CE = 480 V
60
V_GE = 15 V
V_GE = 10 Ω
50
Freewheeling
40 diode 30EPH06
E_off typical
30
20
E_on typical
10
0
50
75 100 125 150 175 200
I_C - Collector to Emitter Current (A)
Fig. 7 - Typical Switching Losses vs.
Collector to Emitter Current
Revision: 10-Jun-15
3
Document Number: 94362
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000