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VS-GA200HS60S1PBF Datasheet, PDF (1/7 Pages) Vishay Siliconix – Very low conduction losses
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VS-GA200HS60S1PbF
Vishay Semiconductors
INT-A-PAK Half Bridge IGBT
(Standard Speed IGBT), 200 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 200 A, 25 °C
Speed
Package
Circuit
600 V
480 A
1.13 V
DC to 1 kHz
INT-A-PAK
Half bridge
FEATURES
• Gen 4 IGBT technology
• Standard: optimized for hard switching speed
• Very low conduction losses
• Industry standard package
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized as output inverter stage for TIG
welding machines



ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
Gate to emitter voltage
RMS isolation voltage
ICM
ILM
VGE
VISOL
Maximum power dissipation
PD
Operating junction temperature range
TJ
Storage temperature range
TStg
TEST CONDITIONS
TC = 25 °C
TC = 116 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 85 °C
MAX.
600
480
200
800
800
± 20
2500
830
430
-40 to +150
-40 to +125
UNITS
V
A
V
W
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
VGE(th)
Collector to emitter leakage current
ICES
Gate to emitter leakage current
IGES
VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 200 A
VGE = 15 V, IC = 200 A, TJ = 125 °C
IC = 0.25 mA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
3
-
-
-
TYP.
-
1.13
1.08
4.5
0.025
-
-
MAX.
-
1.21
1.18
6
1
10
± 250
UNITS
V
mA
nA
Revision: 10-Jun-15
1
Document Number: 94362
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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