VS-GA200HS60S1PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Very low conduction losses

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VS-GA200HS60S1PbF
Vishay Semiconductors
SWITCHING CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Total gate charge
Q_g
I_C = 200 A
-
Gate to emitter charge
Q_ge
V_CC = 400 V
-
Gate to collector charge
Q_gc
V_GE = 15 V
-
Turn-on switching loss
Turn-off switching loss
Total switching loss
E_on
I_C = 200 A, V_CC = 480 V, V_GE = 15 V
-
E_off
R_g = 10 
-
E_ts
Freewheeling diode: 30EPH06, T_J = 25 °C
-
Turn-on switching loss
Turn-off switching loss
Total switching loss
E_on
I_C = 200 A, V_CC = 480 V, V_GE = 15 V
-
E_off
R_g = 10 
-
E_ts
Freewheeling diode: 30EPH06, T_J = 125 °C
-
Input capacitance
C_ies
V_GE = 0 V
-
Output capacitance
C_oes
V_CC = 30 V
-
f = 1.0 MHz
Reverse transfer capacitance
C_res
-
TYP.
1600
260
580
30
50
80
34
104
138
32 500
2080
380
MAX.
1700
340
670
-
-
-
-
-
151
-
-
-
UNITS
nC
mJ
mJ
pF
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction temperature range
Storage temperature range
Junction to case per leg
Case to sink
Mounting torque
case to heatsink
case to terminal 1, 2, 3
T_J
T_Stg
R_thJC
R_thCS
Weight
MIN.
-40
-40
-
-
-
-
-
TYP.
-
-
-
0.1
-
-
185
MAX.
150
125
0.15
-
4
3
-
UNITS
°C
°C/W
Nm
g
1000
V_GE = 15 V
500 µs pulse width
T_J = 125 °C
100
T_J = 25 °C
10
0.6
0.8
1.0
1.2
1.4
1.6
V_CE - Collector to Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
100
T_J = 125 °C
10
T_J = 25 °C
1
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V_GE - Gate to Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
Revision: 10-Jun-15
2
Document Number: 94362
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