V20M100M-E3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Trench MOS Schottky technology

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V20M100M-E3
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
22
20
18
16
14
12
10
8
6
4
2
0
0
R_thJA = R_thJC = 1.4 °C/W
T_A, R_thJA = 40 °C/W
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
10
T_A = 175 °C
T_A = 150 °C
1
T_A = 125 °C
T_A = 100 °C
0.1
0.01
0.001
T_A = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10
9
D = 0.5 ^{D = 0.8}
D = 0.3
8
7
D = 0.2
6
D = 0.1
D = 1.0
5
4
T
3
2
1
D = t_p/T
t_p
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
T_A = 175 °C
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 11-May-16
3
Document Number: 89985
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