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V20M100M-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Trench MOS Schottky technology | |||
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www.vishay.com
V20M100M-E3
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 5 A
TMBS ®
TO-220AB
FEATURES
⢠Trench MOS Schottky technology
⢠Low forward voltage drop, low power losses
⢠High efficiency operation
⢠Solder dip 275 °C max. 10 s, per JESD 22-B106
⢠Material categorization:ï
for definitions of compliance please see
www.vishay.com/doc?99912
V20M100M
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A (TA = 125 °C)
TJ max.
Package
2 x 10 A
100 V
110 A
0.67 V
175 °C
TO-220AB
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220ABï
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102ï
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As markedp
Mounting Torque: 10 in-lbs maximumï
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified currentï
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IFSM
dV/dt
TJ, TSTG
V20M100M
100
20
10
110
10 000
-55 to +175
UNIT
V
A
A
V/μs
°C
Revision: 11-May-16
1
Document Number: 89985
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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