V20M100M-E3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Schottky technology

www.vishay.com
V20M100M-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current per diode
V_R = 70 V
V_R = 100 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.65
0.83
0.57
0.67
1.5
0.8
-
1.5
MAX.
-
1.02
-
0.75
-
-
500
10
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20M100M
per diode
2.8
R_JC
Typical thermal resistance
per device
1.4
per device
R_JA ⁽¹⁾⁽²⁾
40
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20M100M-E3/4W
1.88
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
Revision: 11-May-16
2
Document Number: 89985
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000